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Technology Outline

We are the leading compound semiconductor material supplier with over 50 years of experience producing the highest quality materials. We exceed market quality requirements by utilizing our advanced crystal growth technology, wafer process technology, and evaluation technology of GaAs and GaN materials.

We have the following three types of crystal growth technology:
- MOVPE (Metalorganic Vapor Phase Epitaxy) for GaAs/GaN devices
- HVPE (Hydride Vapor Phase Epitaxy) for GaN substrates, devices and templates
- HFCVD (Hot Filament Chemical Vapor Deposition) for diamond thin films

Our crystal growth utilizes MOVPE (Metal Organic Vapor Phase Epitaxy), HVPE (Hydride Vapor Phase Epitaxy) and HFCVD (Hot Filament Chemical Vapor Deposition) technologies. MOVPE technology enables growth of very thin, nanometer scale layers with precise control of atomic composition. With the knowledge gained over many years of experience, our precise control of equipment parameters, growth conditions, and raw materials allow us to meet or exceed the strict quality requirements from our customers. By using HVPE technology, high quality thick GaN crystals can be grown. We apply this technology to the production of free-standing GaN substrates. As another application of HVPE technology, we are now developing GaN template products. Customer can significantly reduce LED production costs by using our GaN templates.

For over 50 years we have been refining our wafer process technology originally focused on GaAs substrate growth, we are now applying this technology to our GaN substrate wafer processing.

Various evaluation methods are used for product inspection including: X ray evaluation, photoluminescence (PL) analysis, automatic sheet resistance measurement, automatic surface measurement, etc. By using SEM, AFM, CL, etc., we assure the highest quality of our materials and maintain continuous improvement. We also have a large device fabrication line to quickly check device characteristics. The quick characterization is useful for the control of epitaxial wafer stability and for the development of new epitaxial wafer structures and growth methods.

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