Development of semiconductor material for highly advanced communication devices
In the mobile communication market, the 3.5GHz band LTE-advanced (4G) protocol with speeds up to 1Gbps is due for releasing in 2016, and the future 5G system should achieve 10Gbps and is expected to release in 2020. The abovementioned communication market will require higher performance compound semiconductor devices operating on wide bands and high frequencies. Since GaAs devices show high performance in wide band applications with low energy consumption, it is ideally suited for mobile power amplifiers such as those used in smart phones and tablets. As the base station amplifier market progresses toward smaller size and higher efficiency, the share of GaN devices will increase. SCIOCS focuses on the development of GaAs and GaN epitaxial wafers to supply high quality products and to advance the next generation communication market.
Development of "GaN on GaN" materials for next generation high efficiency power conversion devices
Recently GaN devices are expected to be used not only for high frequency device applications but also for high efficiency power devices. In the power conversion device market, research of GaN epitaxial layers on GaN free standing substrates (GaN on GaN) shows great potential to realize small size, high frequency switching devices and inverters. SCIOCS has strong expertise in both GaN epitaxial growth technology and GaN substrate production technology. Utilizing this competitive advantage, we are diligently proceeding with further development of GaN on GaN technology. SCIOCS will continue to be the top supplier for next generation GaN materials.
Development of environmentally friendly next generation materials
After successful development of high quality GaN crystal on sapphire substrate, the materials gained widespread adoption in general lighting applications. However, despite their high quality, the GaN on sapphire structure is still not suitable to produce high-end blue or violet laser diodes. To achieve these laser diodes, low dislocation (high quality) free-standing GaN substrates are necessary, because diodes must exhibit good reliability under high current density conditions. In the future, demand for free standing GaN substrates will increase substantially as the market for high efficiency lighting continues to grow. Some applications currently using mercury bulbs can be replaced by a laser light source. Such trends will support the greater reduction of environmentally hazardous substances.
Currently, general piezoelectric films used for angular rate sensors and MEMS devices contain lead (Pb) which is a well-known environmentally hazardous substance. SCIOCS is developing a new lead free piezoelectric film (KNN), which contain no hazardous materials.
We will continue to develop alternative technologies to eliminate environmentally hazardous substances and support an eco-friendly society. To achieve these goals, we will continue to optimize our technology for GaN substrates and KNN piezoelectric films.