|Oct. 1, 2017||SCIOCS merged Sumitomo Chemical's compound semiconductor materials business. New !|
|Sep. 5-8, 2017||SCIOCS presented at The Japan Society of Applied Physics The 78th Autumn Meeting, 2017 New !
|Jul. 21, 2017||Highly
pure GaN epitaxail layers suitable for drift-layers of vertical power devices has been successfully realized by our HVPE-method.
The related paper has been published in Japanese Journal of Applied Physics (JJAP) and was selected as Spotlights.
″Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates″,
Hajime Fujikura, Taichiro Konno, Takehiro Yoshida, and Fumimasa Horikiri,
Japanese Journal of Applied Physics, Volume 56, Number 8 (2017)
|Apr. 14, 2017||Reactor for AlN-template mass-production has been installed and the crystal quality has been improved.
XRC-FWHM: (0002) around 100sec, (10-12) around 300sec
|Feb. 20, 2017||ITOCHU PLASTICS office has been moved to Ichibancho Tokyu Building.|
|Feb. 7, 2017||SCIOCS's paper has been published online.
Title : Development of GaN substrate with a large diameter and small orientation deviation Link : http://dx.doi.org/10.1002/pssb.201600671